Description

• Silicon Wafers
• III-V Wafers Single Crystal*
- Gallium Arsenide (GaAs)
- Gallium Phosphide (GaP)
- Gallium Antimonide (GaSb)
- Indium Phosphide (InP)
- Indium Antimonide (InSb)
- Indium Arsenide (InAs)
- Indium Gallium Arsenide (InGaAs)

• II-VI Wafers
- Silicon Carbide (SiC)
- Gallium Nitride (GaN)
- Aluminium Nitride (AlN)

• Nitride on Silicon
- Stoichiometric Silicon Nitride LPCVD
- Low Stress Nitride on Silicon
- Super Low Stress Nitride on Silicon

• Thermal Oxide on Silicon
- Wet Thermal Oxide (up to 10 microns thick)
- Dry Thermal Oxide

• Silicon on Insulator
- Thin Device Layer
- Bonded SOI

• Graphene
- Monolayer Graphene on SiO2/Si
- Graphene Oxide (4mg/mL, Water Dispersion 250mL)
- Trilayer Graphene on SiO2/Si
- Reduced Graphene Oxide
- Graphene Oxide Film

• Sapphire (Al2O3)
• Glass
- Borofloat 33
- BK7
- D263
- Fused Silica
- Single Crystal Quartz
- Gorilla Glass
- Corning Eagle Glass
- Soda Lime

• Germanium
• Indium Tin Oxide (ITO)
• Solar Wafers